Characterization of Prismatic Slip in SiC Crystals by Chemical Etching Method

In 4H-silicon carbide crystals, basal plane slip is the predominant deformation mechanism. However, prismatic often observed in single crystals grown by physical vapor transport method as diameter expands to 6 inches or larger. Thermal modeling has shown that occurrence of attributed increased radial thermal gradients. While X-ray topography can be used characterize presence and extent slip, feasibility using chemical etching assess an industrial setting investigated. The distribution scallop shaped etch pits oriented along directions correspond dislocations, correlate well with results model predicts dislocations. This capability pit manage gradients during PVT growth.